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現在(zai)電(dian)(dian)(dian)力工程(cheng)網(wang)絡高(gao)技術調查性箱(xiang)”是為“能(neng)量(liang)(liang)(liang)公(gong)司(si)光(guang)電(dian)(dian)(dian)廠(chang)科(ke)技”教程(cheng)而制定的，它集能(neng)量(liang)(liang)(liang)公(gong)司(si)光(guang)電(dian)(dian)(dian)廠(chang)新(xin)功率(lv)功率(lv)集成(cheng)(cheng)集成(cheng)(cheng)運(yun)(yun)放(fang)芯(xin)(xin)片(pian)(IGBT、MOSFET、GTO、GTR)、驅(qu)程(cheng)集成(cheng)(cheng)運(yun)(yun)放(fang)、保(bao)養(yang)集成(cheng)(cheng)運(yun)(yun)放(fang)于(yu)分離式(shi)，整塊調查性箱(xiang)組(zu)成(cheng)(cheng)主體工程(cheng)，布(bu)局圖合理(li)的。 該調查性箱(xiang)地(di)理(li)地(di)理(li)分布(bu)有新(xin)功率(lv)功率(lv)集成(cheng)(cheng)集成(cheng)(cheng)運(yun)(yun)放(fang)芯(xin)(xin)片(pian)的驅(qu)程(cheng)與保(bao)養(yang)集成(cheng)(cheng)運(yun)(yun)放(fang)，由SG3525帶(dai)來(lai)的PWM正弦(xian)波(bo)形突發器集成(cheng)(cheng)運(yun)(yun)放(fang)，直流電(dian)(dian)(dian)端(duan)電(dian)(dian)(dian)壓表(0～250V)，直流電(dian)(dian)(dian)直流電(dian)(dian)(dian)表(0～2A)，和率(lv)與占空比(bi)轉換電(dian)(dian)(dian)位差(cha)器，接(jie)手(shou)機插件(jian)的測試儀圖片(pian)點也地(di)理(li)地(di)理(li)分布(bu)在(zai)蓋板上，利于(yu)我們(men)連接(jie)線測試儀圖片(pian)。需(xu)要順利完成(cheng)(cheng)能(neng)量(liang)(liang)(liang)公(gong)司(si)光(guang)電(dian)(dian)(dian)廠(chang)新(xin)功率(lv)功率(lv)集成(cheng)(cheng)集成(cheng)(cheng)運(yun)(yun)放(fang)芯(xin)(xin)片(pian)(IGBT、MOSFET、GTO、GTR)基(ji)本特性，驅(qu)程(cheng)及保(bao)養(yang)集成(cheng)(cheng)運(yun)(yun)放(fang)調查性。詳細參數請來(lai)電(dian)(dian)(dian)咨詢。
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